| PartNumber | BU508AF | BU508AFI |
| Description | Bipolar Transistors - BJT NPN Power Transistor | Bipolar Transistors - BJT NPN General Purpose |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | ISOWATT-218FX-3 | SOT-93-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 700 V | 700 V |
| Collector Base Voltage VCBO | 9 V | - |
| Emitter Base Voltage VEBO | 9 V | 10 V |
| Maximum DC Collector Current | 8 A | 8 A |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BU508AF | BU508AF |
| Height | 14.7 mm | 14.9 mm |
| Length | 26.7 mm | 16.2 mm |
| Width | 15.7 mm | 5.65 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 8 A | 8 A |
| Pd Power Dissipation | 50000 mW | 50 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 300 | 30 |
| Subcategory | Transistors | Transistors |
| Gain Bandwidth Product fT | - | 7 MHz |
| Packaging | - | Tube |