PartNumber | BUJ100LR,412 | BUJ100LR,126 |
Description | Bipolar Transistors - BJT Trans GP BJT NPN 400V 1A 3-Pin | Bipolar Transistors - BJT Trans GP BJT NPN 400V 1A 3-Pin |
Manufacturer | WeEn Semiconductors | WeEn Semiconductors |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 400 V | 400 V |
Collector Base Voltage VCBO | 700 V | 700 V |
Collector Emitter Saturation Voltage | 0.24 V | 0.24 V |
Maximum DC Collector Current | 1 A | 1 A |
Maximum Operating Temperature | + 150 C | + 150 C |
DC Current Gain hFE Max | 31 | 31 |
Height | 5.2 mm | 5.2 mm |
Length | 4.8 mm | 4.8 mm |
Width | 4.2 mm | 4.2 mm |
Brand | WeEn Semiconductors | WeEn Semiconductors |
DC Collector/Base Gain hfe Min | 9 | 9 |
Pd Power Dissipation | 2 W | 2 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 5000 | 10000 |
Subcategory | Transistors | Transistors |
Part # Aliases | 934063371412 | 934063371126 |