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| PartNumber | BUJ103AX,127 | BUJ103AX | BUJ103AX127 |
| Description | Bipolar Transistors - BJT SILICON DIFFUSED POWER TRANSISTOR | Now WeEn - BUJ103AX - Power Bipolar Transistor - TO-220F | |
| Manufacturer | WeEn Semiconductors | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | SOT-186A-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Collector Base Voltage VCBO | 700 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 32 | - | - |
| Height | 15.8 mm | - | - |
| Length | 10.3 mm | - | - |
| Width | 4.6 mm | - | - |
| Brand | WeEn Semiconductors | - | - |
| DC Collector/Base Gain hfe Min | 10 | - | - |
| Pd Power Dissipation | 26 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934055159127 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
WeEn Semiconductors |
BUJ103AX,127 | Bipolar Transistors - BJT SILICON DIFFUSED POWER TRANSISTOR | |
| BUJ103AX,127 | Bipolar Transistors - BJT SILICON DIFFUSED POWER TRANSISTOR | ||
| BUJ103AX | Neu und Original | ||
| BUJ103AX127 | Now WeEn - BUJ103AX - Power Bipolar Transistor - TO-220F |