BUK765

BUK765R0-100E,118 vs BUK765R3-40E,118 vs BUK765R2-40B,118

 
PartNumberBUK765R0-100E,118BUK765R3-40E,118BUK765R2-40B,118
DescriptionMOSFET N-channel TrenchMOS intermed level FETMOSFET N-channel TrenchMOS standard level FETMOSFET HIGH PERF TRENCHMOS
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V40 V40 V
Id Continuous Drain Current120 A75 A143 A
Rds On Drain Source Resistance5 mOhms4.2 mOhms5.2 mOhms
Vgs Gate Source Voltage4 V20 V20 V
Pd Power Dissipation357 W137 W203 W
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.050505 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge-35.5 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Channel Mode-EnhancementEnhancement
Fall Time-13 ns56 ns
Rise Time-15 ns51 ns
Typical Turn Off Delay Time-28 ns81 ns
Typical Turn On Delay Time-15 ns15 ns
Height--4.5 mm
Length--10.3 mm
Width--9.4 mm
Part # Aliases--/T3 BUK765R2-40B
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
BUK765R0-100E,118 MOSFET N-channel TrenchMOS intermed level FET
BUK765R3-40E,118 MOSFET N-channel TrenchMOS standard level FET
BUK765R2-40B,118 MOSFET HIGH PERF TRENCHMOS
BUK765R3-40E,118 MOSFET N-CH 40V 75A D2PAK
BUK765R0-100E,118 MOSFET N-channel TrenchMOS intermed level FET
BUK765R2-40B,118 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
BUK765R2-40B118 MOSFET N-CH 40V 75A D2PAK
BUK765R0-100E118 Neu und Original
BUK765R2 Neu und Original
BUK765R2-40B 75 A, 40 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET
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