PartNumber | BUK765R0-100E,118 | BUK765R3-40E,118 | BUK765R2-40B,118 |
Description | MOSFET N-channel TrenchMOS intermed level FET | MOSFET N-channel TrenchMOS standard level FET | MOSFET HIGH PERF TRENCHMOS |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 40 V | 40 V |
Id Continuous Drain Current | 120 A | 75 A | 143 A |
Rds On Drain Source Resistance | 5 mOhms | 4.2 mOhms | 5.2 mOhms |
Vgs Gate Source Voltage | 4 V | 20 V | 20 V |
Pd Power Dissipation | 357 W | 137 W | 203 W |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.050505 oz | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 35.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 13 ns | 56 ns |
Rise Time | - | 15 ns | 51 ns |
Typical Turn Off Delay Time | - | 28 ns | 81 ns |
Typical Turn On Delay Time | - | 15 ns | 15 ns |
Height | - | - | 4.5 mm |
Length | - | - | 10.3 mm |
Width | - | - | 9.4 mm |
Part # Aliases | - | - | /T3 BUK765R2-40B |