 | |  | |
| PartNumber | BUK7E13-60E,127 | BUK7E1R8-40E,127 | BUK7E04-40A,127 |
| Description | MOSFET N-channel TrenchMOS standard level FET | MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA | MOSFET Trans MOSFET N-CH 40V 198A 3pin(3+Tab) |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | I2PAK-3 | I2PAK-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 58 A | - | - |
| Rds On Drain Source Resistance | 9.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 96 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 9.8 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.2 ns | - | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21.9 ns | - | - |
| Typical Turn On Delay Time | 10.8 ns | - | - |
| Unit Weight | 0.081130 oz | 0.070548 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK7E2R6-60E,127 | MOSFET BUK7E2R6-60E/I2PAK/STANDARD MA | |
| BUK7E8R3-40E,127 | MOSFET BUK7E8R3-40E/I2PAK/STANDARD MA | ||
| BUK7E3R5-60E,127 | MOSFET BUK7E3R5-60E/I2PAK/STANDARD MA | ||
| BUK7E1R9-40E,127 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E13-60E,127 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E4R6-60E,127 | MOSFET BUK7E4R6-60E/I2PAK/STANDARD MA | ||
| BUK7E1R8-40E,127 | MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA | ||
| BUK7E5R2-100E,127 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E2R3-40E,127 | MOSFET BUK7E2R3-40E/I2PAK/STANDARD MA | ||
| BUK7E3R1-40E,127 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E13-60E,127 | MOSFET N-CH 60V 58A I2PAK | ||
| BUK7E1R8-40E,127 | MOSFET N-CH 40V 120A I2PAK | ||
| BUK7E2R3-40E,127 | MOSFET N-CH 40V 120A I2PAK | ||
| BUK7E2R6-60E,127 | MOSFET N-CH 60V 120A I2PAK | ||
| BUK7E3R5-60E,127 | MOSFET N-CH 60V 120A I2PAK | ||
| BUK7E4R6-60E,127 | Trans MOSFET N-CH 60V 100A Automotive 3-Pin(3+Tab) I2PAK Rail | ||
| BUK7E8R3-40E,127 | MOSFET N-CH 40V 75A I2PAK | ||
| BUK7E1R9-40E,127 | Darlington Transistors MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E3R1-40E,127 | Darlington Transistors MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E5R2-100E,127 | MOSFET N-CH 100V 120A I2PAK | ||
| BUK7E2R3-40C,127 | MOSFET Trans MOSFET N-CH 40V 276A 3pin(3+Tab) | ||
| BUK7E04-40A,127 | MOSFET Trans MOSFET N-CH 40V 198A 3pin(3+Tab) | ||
NXP Semiconductors |
BUK7E07-55B,127 | MOSFET N-CH 55V 75A I2PAK | |
| BUK7E11-55B,127 | MOSFET N-CH 55V 75A I2PAK | ||
| BUK7E1R6-30E,127 | MOSFET N-CH 30V 120A I2PAK | ||
| BUK7E2R7-30B,127 | MOSFET N-CH 30V 75A I2PAK | ||
| BUK7E4R0-80E,127 | MOSFET N-CH 80V 120A I2PAK | ||
| BUK7E4R3-75C,127 | MOSFET N-CH 75V 100A I2PAK | ||
| BUK7E04-40A | Neu und Original | ||
| BUK7E04-40A127 | Now Nexperia BUK7E04-40A - Power Field-Effect Transistor, 75A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E07-55B127 | Now Nexperia BUK7E07-55B - Power Field-Effect Transistor, 119A I(D), 55V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK7E11-55B127 | Now Nexperia BUK7E11-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E13-60E127 | Now Nexperia BUK7E13-60E - Power Field-Effect Transistor, 58A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E1R6-30E127 | Now Nexperia BUK7E1R6-30E - Power Field-Effect Transistor, I2PAK | ||
| BUK7E1R8-40E127 | Neu und Original | ||
| BUK7E2R3-40C127 | Now Nexperia BUK7E2R3-40C - Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUK7E2R3-40E127 | Now Nexperia BUK7E2R3-40E - Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E2R6-60E127 | Now Nexperia BUK7E2R6-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E2R7-30B127 | - Bulk (Alt: BUK7E2R7-30B127) | ||
| BUK7E3R1-40E127 | Now Nexperia BUK7E3R1-40E - Power Field-Effect Transistor, 100A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E4R0-80E127 | Now Nexperia BUK7E4R0-80E - Power Field-Effect Transistor, I2PAK | ||
| BUK7E4R3-75C127 | - Bulk (Alt: BUK7E4R3-75C127) | ||
| BUK7E4R6-60E | Neu und Original | ||
| BUK7E5R2-100E127 | Now Nexperia BUK7E5R2-100E - Power Field-Effect Transistor, 120A I(D), 100V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |