BUK92150-55A

BUK92150-55A,118 vs BUK92150-55A vs BUK92150-55A,118-CUT TAPE

 
PartNumberBUK92150-55A,118BUK92150-55ABUK92150-55A,118-CUT TAPE
DescriptionMOSFET TAPE13 PWR-MOS
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance125 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation36 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandNexperia--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time57 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time8 ns--
Part # Aliases/T3 BUK92150-55A--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
BUK92150-55A,118 MOSFET TAPE13 PWR-MOS
BUK92150-55A,118 MOSFET N-CH 55V 11A DPAK
BUK92150-55A/CDJ MOSFET N-CH LFPAK
BUK92150-55A Neu und Original
BUK92150-55A118 Now Nexperia BUK92150-55A - Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
BUK92150-55A,118-CUT TAPE Neu und Original
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