BUK9Y25-60

BUK9Y25-60E,115 vs BUK9Y25-60E/GFX vs BUK9Y25-60

 
PartNumberBUK9Y25-60E,115BUK9Y25-60E/GFXBUK9Y25-60
DescriptionMOSFET N-channel 60 V 25 mo FETMOSFET N-CH LFPAK
ManufacturerNexperia-NXP Semiconductors
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance21.5 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation65 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time10.4 ns--
Product TypeMOSFET--
Rise Time12.1 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.7 ns--
Typical Turn On Delay Time8.5 ns--
Unit Weight0.002621 oz--
Series--Automotive, AEC-Q101, TrenchMOS
Package Case--SC-100, SOT-669, 4-LFPAK
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--LFPAK, Power-SO8
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--65W
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--1500pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--34A (Tc)
Rds On Max Id Vgs--21.5 mOhm @ 10A, 10V
Vgs th Max Id--2.1V @ 1mA
Gate Charge Qg Vgs--12nC @ 5V
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
BUK9Y25-60E,115 MOSFET N-channel 60 V 25 mo FET
BUK9Y25-60E,115 MOSFET N-CH 60V 34A LFPAK
NXP Semiconductors
NXP Semiconductors
BUK9Y25-60E/GFX MOSFET N-CH LFPAK
BUK9Y25-60 Neu und Original
BUK9Y25-60E Neu und Original
BUK9Y25-60E,115-CUT TAPE Neu und Original
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