BUL128D-B

BUL128D-B vs BUL128D-B(E)

 
PartNumberBUL128D-BBUL128D-B(E)
DescriptionBipolar Transistors - BJT HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ManufacturerSTMicroelectronics-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleThrough Hole-
Package / CaseTO-220-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max400 V-
Collector Base Voltage VCBO700 V-
Emitter Base Voltage VEBO9 V-
Maximum DC Collector Current4 A-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBUL128D-B-
Height15.75 mm-
Length10.4 mm-
PackagingTube-
Width4.6 mm-
BrandSTMicroelectronics-
Pd Power Dissipation70000 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity1000-
SubcategoryTransistors-
Unit Weight0.211644 oz-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
BUL128D-B Bipolar Transistors - BJT HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL128D-B Bipolar Transistors - BJT IGBT & Power Bipola
BUL128D-B(E) Neu und Original
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