BUL39

BUL39D vs BUL39 vs BUL390

 
PartNumberBUL39DBUL39BUL390
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast Sw
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max450 V--
Collector Base Voltage VCBO800 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1.1 V1.1 V-
Maximum DC Collector Current4 A4 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUL39D500V Transistors-
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current4 A4 A-
DC Collector/Base Gain hfe Min4--
Pd Power Dissipation70 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.211644 oz0.211644 oz-
Packaging-Tube-
Package Case-TO-220-3-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-70W-
Transistor Type-NPN-
Current Collector Ic Max-4A-
Voltage Collector Emitter Breakdown Max-450V-
DC Current Gain hFE Min Ic Vce-10 @ 10mA, 5V-
Vce Saturation Max Ib Ic-1.1V @ 500mA, 2.5A-
Current Collector Cutoff Max-100μA-
Frequency Transition---
Pd Power Dissipation-70 W-
Collector Emitter Voltage VCEO Max-450 V-
Collector Base Voltage VCBO-800 V-
Emitter Base Voltage VEBO-9 V-
DC Collector Base Gain hfe Min-4-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
BUL39D Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
BUL39D Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
BUL39 Neu und Original
BUL390 Neu und Original
BUL39D(E) Neu und Original
BUL39D,BUL129D Neu und Original
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