BYG10GHE

BYG10GHE3/TR3 vs BYG10GHE3/TR vs BYG10GHE3TR3

 
PartNumberBYG10GHE3/TR3BYG10GHE3/TRBYG10GHE3TR3
DescriptionRectifiers 400 Volt 1.5 Amp Glass PassivatedRectifiers 400 Volt 1.5 Amp Glass PassivatedRectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AC
ManufacturerVishay Semiconductor Diodes DivisionVishay Semiconductor Diodes Division-
Product CategoryDiodes, Rectifiers - SingleDiodes, Rectifiers - Single-
Series---
ProductStandard Recovery RectifiersStandard Recovery Rectifiers-
PackagingTape & Reel (TR) Alternate PackagingTape & Reel (TR) Alternate Packaging-
Unit Weight0.003739 oz0.003739 oz-
Mounting StyleSMD/SMTSMD/SMT-
Package CaseDO-214AC, SMADO-214AC, SMA-
Mounting TypeSurface MountSurface Mount-
Supplier Device PackageDO-214AC (SMA)DO-214AC (SMA)-
ConfigurationSingleSingle-
SpeedStandard Recovery >500ns, > 200mA (Io)Standard Recovery >500ns, > 200mA (Io)-
Diode TypeAvalancheAvalanche-
Current Reverse Leakage Vr1μA @ 400V1μA @ 400V-
Voltage Forward Vf Max If1.15V @ 1.5A1.15V @ 1.5A-
Voltage DC Reverse Vr Max400V400V-
Current Average Rectified Io1.5A1.5A-
Reverse Recovery Time trr4μs4μs-
Capacitance Vr F---
Operating Temperature Junction-55°C ~ 150°C-55°C ~ 150°C-
Maximum Operating Temperature+ 150 C+ 150 C-
Minimum Operating Temperature- 55 C- 55 C-
Vf Forward Voltage1.15 V1.15 V-
Vr Reverse Voltage400 V400 V-
Ir Reverse Current1 uA1 uA-
If Forward Current1.5 A1.5 A-
Max Surge Current30 A30 A-
Recovery Time4000 ns4000 ns-
Hersteller Teil # Beschreibung RFQ
Vishay Semiconductors
Vishay Semiconductors
BYG10GHE3_A/I Rectifiers 1.5A,400V,STD,AVAL AEC-Q101 Qualified
Vishay
Vishay
BYG10GHE3_A/I DIODE AVALANCHE 400V 1.5A DO214
BYG10GHE3_A/H DIODE AVALANCHE 400V 1.5A DO214
BYG10GHE3/TR3 Rectifiers 400 Volt 1.5 Amp Glass Passivated
BYG10GHE3/TR Rectifiers 400 Volt 1.5 Amp Glass Passivated
BYG10GHE3TR3 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AC
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