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| PartNumber | CGH09120F | CGH09120F 120W | CGH09120FE |
| Description | RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt | ||
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN | - | - |
| Gain | 21 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Output Power | 20 W | - | - |
| Maximum Drain Gate Voltage | 28 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 56 W | - | - |
| Mounting Style | Screw Mount | - | - |
| Packaging | Tray | - | - |
| Application | Telecom | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 910 MHz | - | - |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Brand | Wolfspeed / Cree | - | - |
| NF Noise Figure | 3 dB | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |