CMUDM7004

CMUDM7004 TR vs CMUDM7004 vs CMUDM7004 TR PBFREE

 
PartNumberCMUDM7004 TRCMUDM7004CMUDM7004 TR PBFREE
DescriptionMOSFET 30V N-Ch Enh FET 8.0Vgs 450mA 250mWTrans MOSFET N-CH 30V 0.45A 3-Pin SOT-523Trans MOSFET N-CH Si 30V 0.45A 3-Pin SOT-523 T/R
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-523--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current450 mA--
Rds On Drain Source Resistance280 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge792 pC--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameUltraMini--
PackagingReelReel-
SeriesCMUDM7CMUDM7004-
Transistor Type1 N-Channel1 N-Channel-
BrandCentral Semiconductor--
Forward Transconductance Min200 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns75 ns-
Typical Turn On Delay Time20 ns20 ns-
Part # AliasesCMUDM7004 PBFREE TR--
Unit Weight0.000071 oz0.000071 oz-
Package Case-SOT-523-3-
Pd Power Dissipation-250 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-450 mA-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1 V-
Rds On Drain Source Resistance-550 mOhms-
Qg Gate Charge-0.792 nC-
Forward Transconductance Min-200 mS-
Hersteller Teil # Beschreibung RFQ
Central Semiconductor
Central Semiconductor
CMUDM7004 TR MOSFET 30V N-Ch Enh FET 8.0Vgs 450mA 250mW
CMUDM7004 Trans MOSFET N-CH 30V 0.45A 3-Pin SOT-523
CMUDM7004 TR PBFREE Trans MOSFET N-CH Si 30V 0.45A 3-Pin SOT-523 T/R
Central Semiconductor
Central Semiconductor
CMUDM7004 TR Darlington Transistors MOSFET SMD-Small Signal N-Channel Mosfet
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