PartNumber | CMUDM8001 TR | CMUDM8001 | CMUDM8004 |
Description | MOSFET P-Ch Enh Mode FET 20Vds 10Vgs 250mW | ||
Manufacturer | Central Semiconductor | - | Central Semiconductor |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-523 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Configuration | Single | - | Single |
Tradename | UltraMini | - | - |
Packaging | Reel | - | Reel |
Series | CMUDM8 | - | CMUDM8004 |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Brand | Central Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | CMUDM8001 PBFREE TR | - | - |
Unit Weight | 0.000071 oz | - | 0.000071 oz |
Package Case | - | - | SOT-523-3 |
Pd Power Dissipation | - | - | 250 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 65 C |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 450 mA |
Vds Drain Source Breakdown Voltage | - | - | - 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Rds On Drain Source Resistance | - | - | 2.6 Ohms |
Qg Gate Charge | - | - | 0.88 nC |
Forward Transconductance Min | - | - | 200 mS |
Channel Mode | - | - | Enhancement |