 |  | | |
| PartNumber | CSD16407Q5 | CSD16407 | CSD16407Q5 25V 100A |
| Description | MOSFET N-Ch NexFET Power MOSFETs | ||
| Manufacturer | Texas Instruments | TI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-Clip-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 13.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 6 mm | - | - |
| Series | CSD16407Q5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 111 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18.4 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 11.9 ns | - | - |
| Unit Weight | 0.004141 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Texas Instruments |
CSD16407Q5 | MOSFET N-Ch NexFET Power MOSFETs | |
| CSD16407Q5C | MOSFET DualCool N-Channel NexFET Power MOSFET | ||
| CSD16407 | Neu und Original | ||
| CSD16407Q5 25V 100A | Neu und Original | ||
| CSD16407Q5A | Neu und Original | ||
| CSD16407Q5C | IGBT Transistors MOSFET DualCool N-Channel NexFET Power MOSFET | ||
| CSD16407Q5 | MOSFET N-CH 25V 100A 8-SON |