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| PartNumber | CSD19536KTT | CSD19536KCS | CSD19536 |
| Description | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 100V N-CH NexFET Pwr MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 272 A | 259 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 118 nC | 118 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Tube | - |
| Height | 4.7 mm | 16.51 mm | - |
| Length | 9.25 mm | 10.67 mm | - |
| Series | CSD19536KTT | CSD19536KCS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 10.26 mm | 4.7 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 329 S | 307 S | - |
| Fall Time | 6 ns | 5 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | 38 ns | - |
| Typical Turn On Delay Time | 13 ns | 14 ns | - |
| Unit Weight | 0.077603 oz | 0.211644 oz | - |