 | |  | |
| PartNumber | CTA2N1P-7-F | CTA2N1P-7 | CTA2N1P |
| Description | Bipolar Transistors - BJT NPN-TRANS P-CH MFET | Bipolar Transistors - BJT NPN-TRANS P-CH MFET | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN, PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 750 mV | - | - |
| Maximum DC Collector Current | 600 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | CTA2N1P | CTA2N1P | - |
| DC Current Gain hFE Max | 300 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 600 mA | - | - |
| DC Collector/Base Gain hfe Min | 20 at 100 uA, 1 V | - | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000212 oz | 0.000212 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
CTA2N1P-7-F | Bipolar Transistors - BJT NPN-TRANS P-CH MFET | |
| CTA2N1P-7 | Bipolar Transistors - BJT NPN-TRANS P-CH MFET | ||
| CTA2N1P | Neu und Original | ||
| CTA2N1P-7 | TRANS ARRAY NPN/P-CH 60V SOT-363 | ||
| CTA2N1P-7-F | Bipolar Transistors - BJT NPN-TRANS P-CH MFET |