CY7C1612KV18-3

CY7C1612KV18-300BZXI vs CY7C1612KV18-300BZC vs CY7C1612KV18-300BZXC

 
PartNumberCY7C1612KV18-300BZXICY7C1612KV18-300BZCCY7C1612KV18-300BZXC
DescriptionSRAM 144MB (8Mx18) QDR II 1.8V, 300MHzSRAM 144Mb (8Mx18) QDR II QDR II + SRAMSRAM 144MB (8Mx18) QDR II 1.8V, 300MHz
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor Corp
Product CategorySRAMSRAMMemory
RoHSYN-
Memory Size144 Mbit144 Mbit144M (8M x 18)
Organization8 M x 188 M x 18-
Access Time0.45 ns0.45 ns-
Maximum Clock Frequency300 MHz300 MHz-
Interface TypeParallelParallel-
Supply Voltage Max1.9 V1.9 V-
Supply Voltage Min1.7 V1.7 V-
Supply Current Max910 mA910 mA-
Minimum Operating Temperature- 40 C0 C-
Maximum Operating Temperature+ 85 C+ 70 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseFBGA-165FBGA-165-
PackagingTrayTrayTray
Memory TypeQDRQDRSRAM - Synchronous, QDR II
SeriesCY7C1612KV18CY7C1612KV18-
TypeSynchronousSynchronous-
BrandCypress SemiconductorCypress Semiconductor-
Moisture SensitiveYesYes-
Product TypeSRAMSRAM-
Factory Pack Quantity105105-
SubcategoryMemory & Data StorageMemory & Data Storage-
Package Case--165-LBGA
Operating Temperature--0°C ~ 70°C (TA)
Interface--Parallel
Voltage Supply--1.7 V ~ 1.9 V
Supplier Device Package--165-FBGA (15x17)
Speed--300MHz
Format Memory--RAM
Hersteller Teil # Beschreibung RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7C1612KV18-300BZXI SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz
CY7C1612KV18-333BZXC SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
CY7C1612KV18-360BZXC SRAM 144Mb, 1.8v, 360Mhz (8Mx18) QDR II SRAM
CY7C1612KV18-333BZC SRAM 144Mb (8Mx18) QDR II QDR II + SRAM
CY7C1612KV18-300BZC SRAM 144Mb (8Mx18) QDR II QDR II + SRAM
CY7C1612KV18-300BZC IC SRAM 144M PARALLEL 165FBGA
CY7C1612KV18-333BZC Neu und Original
CY7C1612KV18-360BZXC SRAM 144Mb, 1.8v, 360Mhz (8Mx18) QDR II SRAM
CY7C1612KV18-333BZXC SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
CY7C1612KV18-300BZXI SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz
CY7C1612KV18-300BZXC SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz
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