CY7C1911KV18-3

CY7C1911KV18-300BZXC vs CY7C1911KV18-300BZCT vs CY7C1911KV18-300BZC

 
PartNumberCY7C1911KV18-300BZXCCY7C1911KV18-300BZCTCY7C1911KV18-300BZC
DescriptionSRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAMSRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAMSRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size18 Mbit18 Mbit18 Mbit
Organization2 M x 92 M x 92 M x 9
Access Time-0.45 ns-
Maximum Clock Frequency300 MHz300 MHz300 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max490 mA490 mA490 mA
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayReelTray
Memory TypeVolatileQDRVolatile
SeriesCY7C1911KV18CY7C1911KV18CY7C1911KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity1361000136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Hersteller Teil # Beschreibung RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7C1911KV18-300BZXC SRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
CY7C1911KV18-333BZC SRAM 18MB (2Mx9) 1.8v 333MHz QDR II SRAM
CY7C1911KV18-300BZCT SRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
CY7C1911KV18-300BZC SRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
CY7C1911KV18-300BZCT Neu und Original
CY7C1911KV18-333BZC SRAM 18MB (2Mx9) 1.8v 333MHz QDR II SRAM
CY7C1911KV18-300BZC SRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
CY7C1911KV18-300BZXC SRAM 18Mb 1.8V 300Mhz 2M x 9 QDR II SRAM
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