 | |  | |
| PartNumber | DCX55-16-13 | DCX55-13 | DCX55-16 |
| Description | Bipolar Transistors - BJT 1000W 60Vceo | Bipolar Transistors - BJT 1000W 60Vceo | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | SOT-89-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V | - |
| Collector Base Voltage VCBO | 60 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | DCX55 | DCX55 | - |
| Height | 1.5 mm | 1.5 mm | - |
| Length | 4.5 mm | 4.5 mm | - |
| Packaging | Reel | Reel | - |
| Width | 2.48 mm | 2.48 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| DC Collector/Base Gain hfe Min | 63 | 63 | - |
| Pd Power Dissipation | 1000 mW | 1000 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001834 oz | 0.001834 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DCX55-16-13 | Bipolar Transistors - BJT 1000W 60Vceo | |
| DCX55-13 | Bipolar Transistors - BJT 1000W 60Vceo | ||
| DCX55-13 | Trans GP BJT NPN 60V 1A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: DCX55-13) | ||
| DCX55-16 | Neu und Original | ||
| DCX5513 | Small Signal Bipolar Transistor, 0.001A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | ||
| DCX55-16-13 | Bipolar Transistors - BJT 1000W 60Vceo |