 |  | | |
| PartNumber | DDB6U215N16L | DDB6U215N12L | DDB6U215N16 |
| Description | Discrete Semiconductor Modules 1600V 215A UN-CNTL | Discrete Semiconductor Modules 1200V 215A UN-CNTL | |
| Manufacturer | Infineon | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Diode Power Modules | - | - |
| Type | Rectifier Diode Module | - | - |
| Vr Reverse Voltage | 1800 V | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | DDB6 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Output Current | 215 A | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Trigger Current Igt | 10 mA | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Factory Pack Quantity | 3 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Part # Aliases | DDB6U215N16LHOSA1 SP000100263 | - | - |
| Unit Weight | 0.010759 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
DDB6U215N16L | Discrete Semiconductor Modules 1600V 215A UN-CNTL | |
| DDB6U215N16LHOSA1 | DIODE MODULE GP 1600V | ||
| DDB6U215N12L | Discrete Semiconductor Modules 1200V 215A UN-CNTL | ||
| DDB6U215N16 | Neu und Original | ||
| DDB6U215N16L | Discrete Semiconductor Modules 1600V 215A UN-CNTL |