 |  | | |
| PartNumber | DMG1013UW-7 | DMG1013UW-7-F | DMG1013UW-7-CUT TAPE |
| Description | MOSFET P-Ch -20V VDSS Enchanced Mosfet | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 820 mA | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 622.4 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.31 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG1013 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 20.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28.4 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns | - | - |
| Unit Weight | 0.000176 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG1013UW-7 | MOSFET P-Ch -20V VDSS Enchanced Mosfet | |
| DMG1013UW-7-F | Neu und Original | ||
| DMG1013UW-7-F MP | Neu und Original | ||
| DMG1013UW-7-CUT TAPE | Neu und Original | ||
| DMG1013UW-7 | IGBT Transistors MOSFET P-Ch -20V VDSS Enchanced Mosfet |