 |  | | |
| PartNumber | DMG1016V-7 | DMG1016V-7-F | DMG1016V-7-CUT TAPE |
| Description | MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 870 mA, 640 mA | - | - |
| Rds On Drain Source Resistance | 400 mOhms, 700 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 736.6 pC, 622.4 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 530 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG1016 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 12.3 ns, 20.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns, 8.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.7 ns, 28.4 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns, 5.1 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG1016V-7 | MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 | |
| DMG1016VQ-13 | MOSFET Comp Pair Enh FET 20Vdss 6Vgss | ||
| DMG1016V-7-F | Neu und Original | ||
| DMG1016V-7-CUT TAPE | Neu und Original | ||
| DMG1016V-7 | MOSFET N/P-CH 20V SOT563 |