DMG743

DMG7430 vs DMG7430LFG vs DMG7430LFG-13

 
PartNumberDMG7430DMG7430LFGDMG7430LFG-13
Description
ManufacturerDIODESDIODES-
Product CategoryFETs - SingleFETs - Single-
SeriesDMG7430DMG7430-
PackagingDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging-
Unit Weight0.002540 oz0.002540 oz-
Mounting StyleSMD/SMTSMD/SMT-
Package Case8-PowerWDFN8-PowerWDFN-
TechnologySiSi-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Mounting TypeSurface MountSurface Mount-
Number of Channels1 Channel1 Channel-
Supplier Device PackagePowerDI3333-8PowerDI3333-8-
ConfigurationSingleSingle-
FET TypeMOSFET N-Channel, Metal OxideMOSFET N-Channel, Metal Oxide-
Power Max900mW900mW-
Transistor Type1 N-Channel1 N-Channel-
Drain to Source Voltage Vdss30V30V-
Input Capacitance Ciss Vds1281pF @ 15V1281pF @ 15V-
FET FeatureStandardStandard-
Current Continuous Drain Id 25°C10.5A (Ta)10.5A (Ta)-
Rds On Max Id Vgs11 mOhm @ 20A, 10V11 mOhm @ 20A, 10V-
Vgs th Max Id2.5V @ 250μA2.5V @ 250μA-
Gate Charge Qg Vgs26.7nC @ 10V26.7nC @ 10V-
Pd Power Dissipation0.9 W0.9 W-
Maximum Operating Temperature+ 150 C+ 150 C-
Minimum Operating Temperature- 55 C- 55 C-
Vgs Gate Source Voltage20 V20 V-
Id Continuous Drain Current10.5 A10.5 A-
Vds Drain Source Breakdown Voltage30 V30 V-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Rds On Drain Source Resistance15 mOhms15 mOhms-
Transistor PolarityN-ChannelN-Channel-
Qg Gate Charge12.5 nC12.5 nC-
Channel ModeEnhancementEnhancement-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMG7430LFG-7 MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K
DMG7430LFGQ-7 MOSFET MOSFET BVDSS: 25V-30V
DMG7430LFGQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMG7430 Neu und Original
DMG7430LFG Neu und Original
DMG7430LFG-13 Neu und Original
DMG7430LFG-7 Trans MOSFET N-CH 30V 10.5A Automotive 8-Pin PowerDI EP T/R
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