DMMT55

DMMT5551 vs DMMT5551-7 vs DMMT5551-7-F

 
PartNumberDMMT5551DMMT5551-7DMMT5551-7-F
DescriptionTRANS 2NPN 160V 0.2A SOT26TRANS 2NPN 160V 0.2A SOT26
Manufacturer-Diodes IncorporatedDiodes Incorporated
Product Category-Transistors (BJT) - ArraysTransistors (BJT) - Arrays
Series--DMMT5551
Packaging-Tape & Reel (TR)Digi-ReelR Alternate Packaging
Package Case-SOT-23-6SOT-23-6
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-26SOT-26
Power Max-300mW300mW
Transistor Type-2 NPN (Dual) Matched Pair2 NPN (Dual) Matched Pair
Current Collector Ic Max-200mA200mA
Voltage Collector Emitter Breakdown Max-160V160V
DC Current Gain hFE Min Ic Vce-80 @ 10mA, 5V80 @ 10mA, 5V
Vce Saturation Max Ib Ic-200mV @ 5mA, 50mA200mV @ 5mA, 50mA
Current Collector Cutoff Max-50nA (ICBO)50nA (ICBO)
Frequency Transition-300MHz300MHz
Unit Weight--0.001058 oz
Mounting Style--SMD/SMT
Configuration--Dual
Pd Power Dissipation--300 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--160 V
Transistor Polarity--NPN
Collector Emitter Saturation Voltage--200 mV
Collector Base Voltage VCBO--180 V
Emitter Base Voltage VEBO--6 V
Maximum DC Collector Current--200 mA
Gain Bandwidth Product fT--300 MHz
DC Collector Base Gain hfe Min--30 at 50 mA 5 V
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMMT5551S-7-F Bipolar Transistors - BJT NPN BIPOLAR
DMMT5551 Neu und Original
DMMT5551S TRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o
DMMT5551S-13-F Neu und Original
DMMT5551S7F Neu und Original
DMMT5551-7 TRANS 2NPN 160V 0.2A SOT26
DMMT5551S-7-F TRANS 2NPN 160V 0.2A SOT26
DMMT5551-7-F TRANS 2NPN 160V 0.2A SOT26
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