DMMT5551

DMMT5551 vs DMMT5551S vs DMMT5551S-13-F

 
PartNumberDMMT5551DMMT5551SDMMT5551S-13-F
DescriptionTRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMMT5551S-7-F Bipolar Transistors - BJT NPN BIPOLAR
DMMT5551S-7-F TRANS 2NPN 160V 0.2A SOT26
DMMT5551 Neu und Original
DMMT5551S TRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o
DMMT5551S-13-F Neu und Original
DMMT5551S7F Neu und Original
DMMT5551-7 TRANS 2NPN 160V 0.2A SOT26
DMMT5551-7-F TRANS 2NPN 160V 0.2A SOT26
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