DMN1004

DMN1004UFDF-7 vs DMN1004UFDF-13 vs DMN1004UFV-13

 
PartNumberDMN1004UFDF-7DMN1004UFDF-13DMN1004UFV-13
DescriptionMOSFET MOSFETBVDSS: 8V-24VMOSFET MOSFETBVDSS: 8V-24VMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseU-DFN2020-6U-DFN2020-6PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage12 V12 V12 V
Id Continuous Drain Current15 A15 A70 A
Rds On Drain Source Resistance4.1 mOhms4.1 mOhms2.8 mOhms
Vgs th Gate Source Threshold Voltage300 mV300 mV300 mV
Vgs Gate Source Voltage8 V8 V8 V
Qg Gate Charge47 nC47 nC47 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.1 W2.1 W900 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time16.9 ns16.9 ns16.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10.7 ns10.7 ns10.7 ns
Factory Pack Quantity3000100003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31.6 ns31.6 ns31.6 ns
Typical Turn On Delay Time5.3 ns5.3 ns5.3 ns
Unit Weight-0.000247 oz-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN1004UFDF-7 MOSFET MOSFETBVDSS: 8V-24V
DMN1004UFDF-13 MOSFET MOSFETBVDSS: 8V-24V
DMN1004UFV-13 MOSFET MOSFET BVDSS: 8V-24V
DMN1004UFV-7 MOSFET MOSFET BVDSS: 8V-24V
DMN1004UFDF-7 MOSFET N-CH 12V 15A UDFN2020-6
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