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| PartNumber | DMN10H099SFG-7 | DMN10H099SFG-13 | DMN10H099SFG |
| Description | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 4.2 A | 4.2 A | - |
| Rds On Drain Source Resistance | 54 mOhms | 99 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25.2 nC | 25.2 nC | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 980 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerDI | PowerDI | - |
| Packaging | Reel | Reel | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 7.3 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.9 ns | - | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |
| Unit Weight | 0.002540 oz | 0.002540 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN10H099SFG-7 | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | |
| DMN10H099SFG-13 | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | ||
| DMN10H099SFG | Neu und Original | ||
| DMN10H099SFG-13 | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | ||
| DMN10H099SFG-7 | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC |