PartNumber | DMN10H170SFDE-7 | DMN10H170SFG-13 | DMN10H170SFDE-13 |
Description | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | U-DFN2020-E-6 | PowerDI3333-8 | U-DFN2020-E-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Reel |
Series | DMN10 | DMN10 | DMN10 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.000238 oz | - | 0.000238 oz |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 8.5 A | - |
Rds On Drain Source Resistance | - | 99 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 14.9 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 2 W | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 3.4 ns | - |
Rise Time | - | 2.3 ns | - |
Typical Turn Off Delay Time | - | 13.9 ns | - |
Typical Turn On Delay Time | - | 4.4 ns | - |