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| PartNumber | DMN2004WK-7-F | DMN2004WK-7-CUT TAPE | DMN2004WK-7 |
| Description | IGBT Transistors MOSFET N-Channel | ||
| Manufacturer | - | - | Diodes Incorporated |
| Product Category | - | - | FETs - Single |
| Series | - | - | DMN2004 |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Unit Weight | - | - | 0.000212 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SC-70, SOT-323 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | SOT-323 |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 200mW |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 150pF @ 16V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 540mA (Ta) |
| Rds On Max Id Vgs | - | - | 550 mOhm @ 540mA, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 200 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 65 C |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 540 mA |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 550 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Channel Mode | - | - | Enhancement |