 |  | | |
| PartNumber | DMN2075UDW-7 | DMN2075UDW | DMN2075UDW-7-F |
| Description | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | Details | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 500 V | - |
| Id Continuous Drain Current | 2.8 A | 2.4 A | - |
| Rds On Drain Source Resistance | 48 mOhms | 2 Ohms | - |
| Vgs Gate Source Voltage | 8 V | 20 V | - |
| Qg Gate Charge | 7 nC | 6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 22 W | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Tube | - |
| Series | DMN2075 | IPU50R2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Infineon Technologies | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 6.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28.1 ns | - | - |
| Typical Turn On Delay Time | 7.4 ns | - | - |
| Unit Weight | 0.000212 oz | 0.012102 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Tradename | - | CoolMOS | - |
| Part # Aliases | - | IPU50R2K0CE SP001053984 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN2075UDW-7 | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | |
| DMN2075UDW | Neu und Original | ||
| DMN2075UDW-7-F | Neu und Original | ||
| DMN2075UDW-7 | Darlington Transistors MOSFET MOSFET BVDSS: 8V-24V SOT363,3K |