| PartNumber | DMN2450UFB4-7B | DMN2450UFB4-7R | DMN2450UFD-7 |
| Description | MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K | MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 3K | MOSFET MOSFET BVDSS: 8V-24V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | X1-DFN1212-3 | X1-DFN1212-3 | X1-DFN1212-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 900 mA | 900 mA | 900 mA |
| Rds On Drain Source Resistance | 600 mOhms | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 450 mV | 450 mV | 450 mV |
| Vgs Gate Source Voltage | 12 V | 12 V | 4.5 V |
| Qg Gate Charge | 0.7 nC | 0.7 nC | 700 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 0.89 W | 0.89 W | 800 mW |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 5.6 ns | 5.6 ns | 5.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.4 ns | 2.4 ns | 2.4 ns |
| Factory Pack Quantity | 10000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20.9 ns | 20.9 ns | 20.9 ns |
| Typical Turn On Delay Time | 3.7 ns | 3.7 ns | 3.7 ns |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |