PartNumber | DMN24H11DS-7 | DMN24H11DSQ-7 | DMN24H11DSQ-13 |
Description | MOSFET MOSFET BVDSS: 101V-250V | MOSFET MOSFET BVDSS: 101V-250V | MOSFET MOSFET BVDSS: 101V-250V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 240 V | 240 V | 240 V |
Id Continuous Drain Current | 270 mA | 270 mA | 270 mA |
Rds On Drain Source Resistance | 11 Ohms | 11 Ohms | 11 Ohms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 3.7 nC | 3.7 nC | 3.7 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.2 W | 1.2 W | 1.2 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 102.3 ns | 102.3 ns | 102.3 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.7 ns | 4.7 ns | 4.7 ns |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17.5 ns | 17.5 ns | 17.5 ns |
Typical Turn On Delay Time | 4.8 ns | 4.8 ns | 4.8 ns |
Qualification | - | AEC-Q101 | AEC-Q101 |
Unit Weight | - | 0.000212 oz | 0.000212 oz |