DMN24H1

DMN24H11DS-7 vs DMN24H11DSQ-7 vs DMN24H11DSQ-13

 
PartNumberDMN24H11DS-7DMN24H11DSQ-7DMN24H11DSQ-13
DescriptionMOSFET MOSFET BVDSS: 101V-250VMOSFET MOSFET BVDSS: 101V-250VMOSFET MOSFET BVDSS: 101V-250V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage240 V240 V240 V
Id Continuous Drain Current270 mA270 mA270 mA
Rds On Drain Source Resistance11 Ohms11 Ohms11 Ohms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge3.7 nC3.7 nC3.7 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.2 W1.2 W1.2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time102.3 ns102.3 ns102.3 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time4.7 ns4.7 ns4.7 ns
Factory Pack Quantity3000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17.5 ns17.5 ns17.5 ns
Typical Turn On Delay Time4.8 ns4.8 ns4.8 ns
Qualification-AEC-Q101AEC-Q101
Unit Weight-0.000212 oz0.000212 oz
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN24H11DS-7 MOSFET MOSFET BVDSS: 101V-250V
DMN24H11DSQ-7 MOSFET MOSFET BVDSS: 101V-250V
DMN24H11DSQ-13 MOSFET MOSFET BVDSS: 101V-250V
DMN24H11DS-7 Trans MOSFET N-CH 240V 0.27A Automotive 3-Pin SOT-23 T/R
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