 |  | | |
| PartNumber | DMN26D0UFB4-7 | DMN26D0UFB4 | DMN26D0UFB4-7-CUT TAPE |
| Description | MOSFET ENHANCE MODE MOSFET 20V N-Chan | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | X2-DFN1006-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 240 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN26 | DMN26 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 180 mS | - | - |
| Fall Time | 15.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13.4 ns | 29 ns | - |
| Typical Turn On Delay Time | 3.8 ns | 12 ns | - |
| Unit Weight | 0.000028 oz | - | - |
| Package Case | - | 3-XFDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | X2-DFN1006-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 350mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 14.1pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 230mA (Ta) | - |
| Rds On Max Id Vgs | - | 3 Ohm @ 100mA, 4.5V | - |
| Vgs th Max Id | - | 1.1V @ 250μA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 350 mW | - |
| Id Continuous Drain Current | - | 230 mA | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 1.8 Ohms | - |
| Forward Transconductance Min | - | 0.242 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN26D0UFB4-7 | MOSFET ENHANCE MODE MOSFET 20V N-Chan | |
| DMN26D0UFB4 | Neu und Original | ||
| DMN26D0UFB4-7B | Trans MOSFET N-CH 20V 0.24A Automotive T/R | ||
| DMN26D0UFB4-7B-55 | Neu und Original | ||
| DMN26D0UFB4-7-CUT TAPE | Neu und Original | ||
| DMN26D0UFB4-7 | Trans MOSFET N-CH 20V 0.24A Automotive 3-Pin X2-DFN T/R |