DMN2990UF

DMN2990UFA-7B vs DMN2990UFB-7B vs DMN2990UFO-7B

 
PartNumberDMN2990UFA-7BDMN2990UFB-7BDMN2990UFO-7B
DescriptionMOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10KMOSFET MOSFETMOSFET MOSFETBVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseX2-DFN0806-3X1-DFN1006-3X2-DFN0604-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current510 mA780 mA750 mA
Rds On Drain Source Resistance990 mOhms900 mOhms500 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V400 mV
Vgs Gate Source Voltage8 V8 V8 V
Qg Gate Charge500 pC0.41 nC410 pC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation400 mW0.92 W840 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN2990--
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min180 mS--
Fall Time6.4 ns-12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time3.3 ns-3.4 ns
Factory Pack Quantity100001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns-24 ns
Typical Turn On Delay Time4 ns-4.5 ns
Unit Weight--0.000035 oz
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN2990UFA-7B MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
DMN2990UFZ-7B MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF
DMN2990UFB-7B MOSFET MOSFET
DMN2990UFO-7B MOSFET MOSFETBVDSS: 8V-24V
DMN2990UFA-7B MOSFET N-CH 20V 0.51A
DMN2990UFZ-7B Trans MOSFET N-CH 20V 0.25A Automotive 3-Pin X2-DFN T/R
DMN2990UFZ-7B-CUT TAPE Neu und Original
Top