OMO ElectronicOMO Electronic
Expand menu
0 Wagen

DMN3008SF

DMN3008SFG-7 vs DMN3008SFGQ-13 vs DMN3008SFG-13

 
PartNumberDMN3008SFG-7DMN3008SFGQ-13DMN3008SFG-13
DescriptionMOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6AMOSFET MOSFET BVDSS: 25V-30VMOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V-30 V
Id Continuous Drain Current17.6 A-17.6 A
Rds On Drain Source Resistance4.6 mOhms-4.6 mOhms
Vgs th Gate Source Threshold Voltage2.3 V-2.3 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge41 nC-41 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.1 W-2.1 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenamePowerDI-PowerDI
PackagingReelReelReel
SeriesDMN3008-DMN3008
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time28.4 ns-28.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time14 ns-14 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time63.7 ns-63.7 ns
Typical Turn On Delay Time5.7 ns-5.7 ns
Unit Weight0.002540 oz-0.002540 oz
Qualification-AEC-Q101-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated 		DMN3008SFG-7 MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3008SFGQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMN3008SFG-13 MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3008SFGQ-7 MOSFET NCH 30V 17.6A POWERDI
DMN3008SFG-7 Darlington Transistors MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3008SFG-13 MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
Top