DMN3012

DMN3012LDG-7 vs DMN3012LDG-13 vs DMN3012LEG-13

 
PartNumberDMN3012LDG-7DMN3012LDG-13DMN3012LEG-13
DescriptionMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1KMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3KMOSFET MOSFET BVDSS: 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-BPowerDI3333-8
Number of Channels2 Channel2 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current20 A20 A20 A
Rds On Drain Source Resistance12 mOhms, 6 mOhms12 mOhms, 6 mOhms12 mOhms
Vgs th Gate Source Threshold Voltage1 V, 750 mV1 V, 750 mV1 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge6.1 nC, 12.6 nC6.1 nC, 12.6 nC6.1 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.2 W2.2 W2.2 W
ConfigurationDualDualSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min27 S, 46 S27 S, 46 S-
Fall Time2.3 ns, 2.9 ns2.3 ns, 2.9 ns2.3 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.7 ns, 3.5 ns2.7 ns, 3.5 ns2.7 ns
Factory Pack Quantity100030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time6.4 ns, 12.4 ns6.4 ns, 12.4 ns6.4 ns
Typical Turn On Delay Time5.1 ns, 4.4 ns5.1 ns, 4.4 ns5.1 ns
Unit Weight0.001552 oz0.001552 oz-
Transistor Type--1 N-Channel
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN3012LDG-7 MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1K
DMN3012LDG-13 MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
DMN3012LEG-7 MOSFET MOSFET BVDSS: 25V-30V
DMN3012LEG-13 MOSFET MOSFET BVDSS: 25V-30V
DMN3012LDG-13 MOSFET BVDSS: 25V30V PowerDI3333-8 T&R 3K
DMN3012LDG-7 MOSFET BVDSS: 25V30V PowerDI3333-8 T&R 1K
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