DMN3016LFDE

DMN3016LFDE-7 vs DMN3016LFDE-13 vs DMN3016LFDE13

 
PartNumberDMN3016LFDE-7DMN3016LFDE-13DMN3016LFDE13
DescriptionMOSFET N-CHANNEL EH MODE 30V 10A 12mOhmMOSFET N-CHANNEL EH MODE 30V 10A 12mOhmSmall Signal Field-Effect Transisto
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseU-DFN2020-E-6U-DFN2020-E-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current10 A10 A-
Rds On Drain Source Resistance16 mOhms16 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V1.4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge25.1 nC25.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.02 W2.02 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.6 mm0.6 mm-
Length2 mm2 mm-
ProductEnhancement Mode MOSFETEnhancement Mode MOSFET-
SeriesDMN3016DMN3016-
Transistor Type1 N-Channel1 N-Channel-
TypeEnhancement Mode MOSFETEnhancement Mode MOSFET-
Width2 mm2 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min---
Fall Time5.6 ns5.6 ns-
Product TypeMOSFETMOSFET-
Rise Time16.5 ns16.5 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26.1 ns26.1 ns-
Typical Turn On Delay Time4.8 ns4.8 ns-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN3016LFDE-7 MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
DMN3016LFDE-13 MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
DMN3016LFDE13 Small Signal Field-Effect Transisto
DMN3016LFDE-13 MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
DMN3016LFDE-7 MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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