DMN3022

DMN3022LFG-13 vs DMN3022LDG-7 vs DMN3022LDG-13

 
PartNumberDMN3022LFG-13DMN3022LDG-7DMN3022LDG-13
DescriptionMOSFET MOSFET BVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current15 A15 A15 A
Rds On Drain Source Resistance22 mOhms, 8 mOhms22 mOhms, 8 mOhms22 mOhms, 8 mOhms
Vgs th Gate Source Threshold Voltage1 V, 800 mV1 V, 800 mV1 V, 800 mV
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge3.7 nC, 8 nC3.7 nC, 8 nC3.7 nC, 8 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.96 W1.96 W1.96 W
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time1.9 ns, 2.4 ns1.9 ns, 2.4 ns1.9 ns, 2.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time1.8 ns, 2.5 ns1.8 ns, 2.5 ns1.8 ns, 2.5 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time7.2 ns, 11.7 ns7.2 ns, 11.7 ns7.2 ns, 11.7 ns
Typical Turn On Delay Time4.5 ns, 5.6 ns4.5 ns, 5.6 ns4.5 ns, 5.6 ns
Unit Weight0.001552 oz0.001552 oz0.001552 oz
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN3022LFG-13 MOSFET MOSFET BVDSS: 25V-30V
DMN3022LDG-7 MOSFET MOSFET BVDSS: 25V-30V
DMN3022LFG-7 MOSFET MOSFET BVDSS: 25V-30V
DMN3022LDG-13 MOSFET MOSFET BVDSS: 25V-30V
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