DMN3033LD

DMN3033LDM-7 vs DMN3033LDM vs DMN3033LDM-7-F

 
PartNumberDMN3033LDM-7DMN3033LDMDMN3033LDM-7-F
DescriptionMOSFET NMOS-SINGLE
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6.9 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMN3033--
Transistor Type1 N-Channel--
Width1.6 mm--
BrandDiodes Incorporated--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time63 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.000529 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN3033LDM-7 MOSFET NMOS-SINGLE
DMN3033LDM Neu und Original
DMN3033LDM-7-F Neu und Original
DMN3033LDM-7 Darlington Transistors MOSFET NMOS-SINGLE
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