DMN4026

DMN4026SSD-13 vs DMN4026SK3-13 vs DMN4026SSD-13-F

 
PartNumberDMN4026SSD-13DMN4026SK3-13DMN4026SSD-13-F
DescriptionMOSFET N-Ch Enh Mode FET 40Vdss 20VgssMOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8TO-252-3-
Number of Channels2 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current7 A28 A-
Rds On Drain Source Resistance20 mOhms20 mOhms-
Vgs th Gate Source Threshold Voltage3 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19.1 nC9.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W3.4 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN40DMN40-
Transistor Type2 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time4.8 ns3.1 ns-
Product TypeMOSFETMOSFET-
Rise Time7.1 ns4.6 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.1 ns19.5 ns-
Typical Turn On Delay Time5.3 ns4.3 ns-
Unit Weight0.002610 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN4026SSDQ-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
DMN4026SSD-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
DMN4026SK3-13 MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
DMN4026SSD-13 MOSFET 2N-CH 40V 7A 8SO
DMN4026SSD-13-F Neu und Original
DMN4026SK3-13 IGBT Transistors MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
DMN4026SSDQ-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
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