DMN53D0U

DMN53D0U-7 vs DMN53D0U-7-F vs DMN53D0U-13

 
PartNumberDMN53D0U-7DMN53D0U-7-FDMN53D0U-13
DescriptionMOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1VgsMOSFET N-CHANNEL MOSFET
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage5 V--
Qg Gate Charge0.6 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation520 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
SeriesDMN53-DMN53
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes Incorporated--
Fall Time14 ns-14 ns
Product TypeMOSFET--
Rise Time2.8 ns-2.8 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns-21 ns
Typical Turn On Delay Time2.1 ns-2.1 ns
Unit Weight0.000282 oz-0.000282 oz
Package Case--SOT-23-3
Pd Power Dissipation--520 mW
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--300 mA
Vds Drain Source Breakdown Voltage--50 V
Vgs th Gate Source Threshold Voltage--1 V
Rds On Drain Source Resistance--3 Ohms
Qg Gate Charge--0.6 nC
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN53D0U-7 MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs
DMN53D0U-7-F Neu und Original
DMN53D0U-7 Darlington Transistors MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs
DMN53D0U-13 MOSFET N-CHANNEL MOSFET
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