DMN6069SE

DMN6069SE-13 vs DMN6069SE vs DMN6069SE , WM8983GEFL/R

 
PartNumberDMN6069SE-13DMN6069SEDMN6069SE , WM8983GEFL/R
DescriptionMOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 2.5K
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current4.3 A--
Rds On Drain Source Resistance69 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge16 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation11 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
BrandDiodes Incorporated--
Fall Time5.3 ns--
Product TypeMOSFET--
Rise Time6.7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time3.8 ns--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN6069SE-13 MOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 2.5K
DMN6069SE Neu und Original
DMN6069SE , WM8983GEFL/R Neu und Original
DMN6069SE-13 MOSFETN-CH 60VSOT223
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