| PartNumber | DMN62D1LFD-7 | DMN62D1LFB-7B | DMN62D1LFD-13 |
| Description | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | X1-DFN1212-3 | X1-DFN1006-3 | X1-DFN1212-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 400 mA | 320 mA | 400 mA |
| Rds On Drain Source Resistance | 1.4 Ohms | 2 Ohms | 1.4 Ohms |
| Vgs th Gate Source Threshold Voltage | 1 V | 600 mV | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 550 pC | 0.9 nC | 550 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 0.5 W | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN62D | - | DMN62D |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 13.9 ns | 16.3 ns | 13.9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.8 ns | 3.4 ns | 2.8 ns |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 26.4 ns | 21 ns |
| Typical Turn On Delay Time | 2.1 ns | 3.4 ns | 2.1 ns |
| Unit Weight | - | 0.000035 oz | - |