DMN65D8LF

DMN65D8LFB-7B vs DMN65D8LFB-7 vs DMN65D8LFB-7B/DIODES

 
PartNumberDMN65D8LFB-7BDMN65D8LFB-7DMN65D8LFB-7B/DIODES
DescriptionMOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10KMOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseX1-DFN1006-3X1-DFN1006-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current400 mA400 mA-
Rds On Drain Source Resistance3 Ohms3 Ohms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation840 mW430 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN65DMN65D-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time6.29 ns6.29 ns-
Product TypeMOSFETMOSFET-
Rise Time3.15 ns3.15 ns-
Factory Pack Quantity100003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12.025 ns12.025 ns-
Typical Turn On Delay Time3.27 ns3.27 ns-
Qg Gate Charge---
Forward Transconductance Min---
Unit Weight-0.000035 oz-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN65D8LFB-7B MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
DMN65D8LFB-7 MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
DMN65D8LFB-7B/DIODES Neu und Original
DMN65D8LFB-7 Trans MOSFET N-CH 60V 0.4A Automotive 3-Pin DFN T/R
DMN65D8LFB-7B Darlington Transistors MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
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