DMP3017

DMP3017SFG-7 vs DMP3017SFG-13-55 vs DMP3017SFG-13

 
PartNumberDMP3017SFG-7DMP3017SFG-13-55DMP3017SFG-13
DescriptionMOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pFMOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CasePowerDI3333-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current11.5 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge41 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
SeriesDMP3017-DMP3017
Transistor Type1 P-Channel-1 P-Channel
BrandDiodes Incorporated--
Forward Transconductance Min24 S--
Fall Time36.8 ns--
Product TypeMOSFET--
Rise Time15.4 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45.6 ns--
Typical Turn On Delay Time7.5 ns--
Unit Weight0.002540 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMP3017SFGQ-7 MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm
DMP3017SFG-7 MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
DMP3017SFGQ-7 30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFK Neu und Original
DMP3017SFV-13 MOSFET P-CH 30V 40A POWERDI3333
DMP3017SFV-7 MOSFET P-CH 30V 40A POWERDI3333
DMP3017SFG-13-55 Neu und Original
DMP3017SFG-7-55 Transistor MOSFET P-CH 30V 15.2A 8-Pin PowerDI3333 T/R (Alt: DMP3017SFG-7-55)
DMP3017SFG-7-CUT TAPE Neu und Original
DMP3017SFGQ-13 30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFK-7 Darlington Transistors MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC
DMP3017SFG-7 IGBT Transistors MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
DMP3017SFK-13 MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC
DMP3017SFG-13 MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
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