DMP6110SS

DMP6110SSD-13 vs DMP6110SSS vs DMP6110SSS-13

 
PartNumberDMP6110SSD-13DMP6110SSSDMP6110SSS-13
DescriptionMOSFET 60V Dual P-Ch Enh FET 60Vds 20VgsDarlington Transistors MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8--
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3.3 A--
Rds On Drain Source Resistance105 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge17.2 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.7 W--
ConfigurationDualSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP6110DMP61DMP61
Transistor Type2 P-Channel1 P-Channel1 P-Channel
BrandDiodes Incorporated--
Fall Time42 ns26.1 ns26.1 ns
Product TypeMOSFET--
Rise Time23 ns6.3 ns6.3 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns58.7 ns58.7 ns
Typical Turn On Delay Time4.4 ns3.7 ns3.7 ns
Unit Weight0.002610 oz0.002610 oz0.002610 oz
Package Case-SO-8SO-8
Pd Power Dissipation-2 W2 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-- 4.5 A- 4.5 A
Vds Drain Source Breakdown Voltage-- 60 V- 60 V
Vgs th Gate Source Threshold Voltage-- 3 V- 3 V
Rds On Drain Source Resistance-98 mOhms98 mOhms
Qg Gate Charge-9.5 nC9.5 nC
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMP6110SSD-13 MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
DMP6110SSD-13 Trans MOSFET P-CH 60V 3.3A Automotive 8-Pin SO T/R
DMP6110SSS Neu und Original
DMP6110SSSQ-13 60V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP6110SSS-13 Darlington Transistors MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
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