DMPH4029

DMPH4029LFG-7 vs DMPH4029LFG-13 vs DMPH4029LFGQ-13

 
PartNumberDMPH4029LFG-7DMPH4029LFG-13DMPH4029LFGQ-13
DescriptionMOSFET MOSFET BVDSS: 31V-40VMOSFET MOSFET BVDSS: 31V-40VMOSFET MOSFET BVDSS: 31V-40V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current8 A8 A8 A
Rds On Drain Source Resistance45 mOhms45 mOhms45 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge34 nC34 nC34 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation2.8 W2.8 W2.8 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time30 ns30 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.8 ns2.8 ns2.8 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time83 ns83 ns83 ns
Typical Turn On Delay Time3.9 ns3.9 ns3.9 ns
Qualification--AEC-Q101
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMPH4029LFG-7 MOSFET MOSFET BVDSS: 31V-40V
DMPH4029LFGQ-7 MOSFET MOSFET BVDSS: 31V-40V
DMPH4029LFG-13 MOSFET MOSFET BVDSS: 31V-40V
DMPH4029LFGQ-13 MOSFET MOSFET BVDSS: 31V-40V
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