DMT3006LFV

DMT3006LFV-13 vs DMT3006LFVQ-13 vs DMT3006LFV-7

 
PartNumberDMT3006LFV-13DMT3006LFVQ-13DMT3006LFV-7
DescriptionMOSFET MOSFET BVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current60 A60 A60 A
Rds On Drain Source Resistance5.6 mOhms7 mOhms5.6 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage10 V20 V10 V
Qg Gate Charge8.4 nC16.7 nC8.4 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2 W2 W2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time4.6 ns4.6 ns4.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5.5 ns5.5 ns5.5 ns
Factory Pack Quantity300030002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13.5 ns13.5 ns13.5 ns
Typical Turn On Delay Time3.5 ns3.5 ns3.5 ns
Mounting Style-SMD/SMT-
Qualification-AEC-Q101-
Packaging-Reel-
Unit Weight-0.001058 oz-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMT3006LFV-13 MOSFET MOSFET BVDSS: 25V-30V
DMT3006LFVQ-7 MOSFET MOSFET BVDSS: 25V-30V
DMT3006LFVQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMT3006LFV-7 MOSFET MOSFET BVDSS: 25V-30V
DMT3006LFV Neu und Original
DMT3006LFV-7 MOSFET BVDSS: 25V30V PowerDI3333-8 T&R 2K
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