 | |  | |
| PartNumber | DMT3020LFDB-7 | DMT3020LFDB-13 | DMT3020LFDB-7-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | U-DFN2020-B-6 | U-DFN2020-B-6 | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.7 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms, 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7 nC, 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 2.4 ns, 2.4 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1.9 ns, 1.9 ns | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7.5 ns, 7.5 ns | - | - |
| Typical Turn On Delay Time | 1.8 ns, 1.8 ns | - | - |
| Unit Weight | 0.000238 oz | 0.000238 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT3020LFDB-7 | MOSFET MOSFET BVDSS: 25V-30V | |
| DMT3020LFDB-13 | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMT3020LFDB-7 | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | ||
| DMT3020LFDB-7DIODES | Neu und Original | ||
| DMT3020LFDB-7-CUT TAPE | Neu und Original |