PartNumber | DMTH8003SPS-13 | DMTH8008SPS-13 | DMTH8008LPS-13 |
Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-8 | PowerDI5060-8 | PowerDI5060-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 100 A | 92 A | 91 A |
Rds On Drain Source Resistance | 3.9 mOhms | 11 mOhms | 11 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 1.3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 124.3 nC | 34 nC | 41.2 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 125 W | 3.4 W | 3 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Series | DMTH8003 | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 20.9 ns | 21 ns | 43.2 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24.4 ns | 15 ns | 5.4 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 47.9 ns | 29 ns | 24.5 ns |
Typical Turn On Delay Time | 12.6 ns | 8 ns | 5.8 ns |
Unit Weight | 0.003422 oz | - | - |
RoHS | - | Y | Y |
Transistor Type | - | 1 N-Channel | 1 N-Channel |